EP 406 - Semiconductor Devices & Fabrication
- Credit Hours: 3R-3L-4C
- Term Available: W
- Graduate Studies Eligible: No
- Prerequisites: PH 405 or PH 505
- Corequisites: None
Physical properties and applications of semiconductor devices including bipolar junction transistors (BJT), metal-semiconductor contacts (Schottky and ohmic), junction field effect transistors (JFET and MESFET), metal-oxide semiconductor (MOS) interfaces and field effect transistors (MOSFET and CMOS), photoconductors, photodetectors (PIN and APD), solar cells, light emitting diodes (LED), and laser diodes. Laboratory experiments will cover the following topics: characterization of semiconductor devices, op-amps, CMOS, NAND and other logic and analog components. Cross-listed with EP 506.